Silicon Epitaxy and Silicon Heterostructures

  in Special Issue   Posted on December 28, 2016

Information for the Special Issue

Submission Deadline: Wed 10 May 2017
Journal Impact Factor : 2.305
Journal Name : Semiconductor Science and Technology
Journal Publisher:
Website for the Special Issue:
Journal & Submission Website:

Special Issue Call for Papers:

This special issue will focus on all aspects of science, engineering, technologies and instrumentation of silicon-based epitaxy including the electronic, structural, optical, magnetic and transport properties of materials and devices. Molecular beam epitaxy and chemical vapor deposition are the main epitaxial growth techniques to create state of the art group-IV based semiconductor materials.
Key topics include but are not limited to:

Group-IV semiconductors and their alloys (i.e. SiGe:C, SiGeSn, SiC, GePb etc) as bulk materials or low-dimensional semiconductor structures (quantum wells, quantum dots and 2D-materials)
Research of the structural, electronic, optoelectronic, thermoelectric and magnetic materials properties of the grown silicon based semiconductors

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