IEEE Transactions on Electron Devices

  in Journal   Posted on September 23, 2020

Journal Ranking & Metrics

G2R Score : 3.96
G2R H-Index : 13
JCR Impact Factor : 2.913
Scopus Citescore : 5.3
SCIMAGO SJR : 0.879
SCIMAGO H-index : 176
Guide2Research Overall Ranking : 243

Journal Information

ISSN : 0018-9383
Publisher :
Periodicity : Monthly
Journal & Submission Website : http://eds.ieee.org/t-ed.html

Top Scientists who published in this Journal

Number of top scientists* : 21
Documents published by top scientists* : 53
* Based on data published during the last three years.

Aims & Scope of the Journal

IEEE Transactions on Electron Devices was the number eighteen most-cited journal in electrical and electronics engineering in 2003, according to the annual Journal Citation Report (2003 edition) published by the Institute for Scientific Information. It comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.